Mathematics, Informatics, Physics: Science and Education

Electronic scientific journal

Vol. 3 No. 1 (2026)
ARTICLES

Mathematical modeling of the influence of deformation effects on the diffusion coefficient of impurities in nanoheterostructures

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  • Olesya Dan'kiv,
  • Yurij Nechypor,
  • Oleh Kuzyk
Olesya Dan'kiv
Drohobych Ivan Franko State Pedagogical University
Bio
Yurij Nechypor
Drohobych Ivan Franko State Pedagogical University
Bio
Oleh Kuzyk
Drohobych Ivan Franko State Pedagogical University
Bio

Published 2026-05-27

Keywords

  • heterosystem,
  • deformation,
  • impurity,
  • diffusion,
  • mechanical strain,
  • mathematical modeling
    • ...More
    Less

Copyright (c) 2026 Олеся Даньків, Юрiй Нечипор, Олег Кузик

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This work is licensed under a Creative Commons Attribution 4.0 International License.

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Mathematical modeling of the influence of deformation effects on the diffusion coefficient of impurities in nanoheterostructures. (2026). Mathematics, Informatics, Physics: Science and Education, 3(1), 41–54. https://doi.org/10.31652/3041-1955-2026-03-01-04
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Abstract

A mathematical model of diffusion in heterosystems taking into account deformation has been constructed. The mathematical model is based on the solution of the stationary Fick equation modified by mechanical-deformation effects. Within the framework of the developed model, the influence of deformation on the diffusion coefficient of impurities in the heterostructure was studied. It was found that with an increase in the mismatch of the lattice parameters of the contacting materials of the GaAs/InxGa1−xAs/GaAs heterostructure by 7%, the diffusion coefficient of impurity of the type of stretching center in the inner In0.2Ga0.8As layer decreases by 35% relative to the diffusion coefficient of impurities in the unstrained layer, which is associated with an increase in stretching deformation as a result of self-consistent deformation-diffusion redistribution.

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