Mathematical modeling of the influence of deformation effects on the diffusion coefficient of impurities in nanoheterostructures

Authors

DOI:

https://doi.org/10.31652/3041-1955-2026-03-01-04

Keywords:

heterosystem, deformation, impurity, diffusion, mechanical strain, mathematical modeling

Abstract

A mathematical model of diffusion in heterosystems taking into account deformation has been constructed. The mathematical model is based on the solution of the stationary Fick equation modified by mechanical-deformation effects. Within the framework of the developed model, the influence of deformation on the diffusion coefficient of impurities in the heterostructure was studied. It was found that with an increase in the mismatch of the lattice parameters of the contacting materials of the GaAs/InxGa1−xAs/GaAs heterostructure by 7%, the diffusion coefficient of impurity of the type of stretching center in the inner In0.2Ga0.8As layer decreases by 35% relative to the diffusion coefficient of impurities in the unstrained layer, which is associated with an increase in stretching deformation as a result of self-consistent deformation-diffusion redistribution.

Downloads

Download data is not yet available.

Author Biographies

  • Olesya Dan'kiv, Drohobych Ivan Franko State Pedagogical University
    Candidate of Science in Physіcs and Mathematics, Associate Professor, Department of Physics and Information Systems, Drohobych Ivan Franko State Pedagogical University, 24, Ivan Franko Str., Drohobych 82100, Ukraine
  • Yurij Nechypor, Drohobych Ivan Franko State Pedagogical University
    Postgraduate Student, Department of Physics and Information Systems, DrohobychIvan Franko State Pedagogical University, 24, Ivan Franko Str., Drohobych 82100, Ukraine
  • Oleh Kuzyk, Drohobych Ivan Franko State Pedagogical University
    Candidate of Science in Physіcs and Mathematics, Associate Professor, Department of Physics and Information Systems, Drohobych Ivan Franko State Pedagogical University, 24, Ivan Franko Str., Drohobych 82100, Ukraine

References

Robson J. D. Deformation enhanced diffusion in aluminium alloys. Metallurgical and Materials Transactions A. 2020. Vol. 51. P. 5029-5041. DOI: https://doi.org/10.1007/s11661-020-05960-5

Voges J., Duvigneau F., Juhre D. On the deformation dependency of the diffusion flux in solids at large deformations. Continuum Mechanics and Thermodynamics. 2022. Vol. 34. P. 1991-2012. DOI: https://doi.org/10.1007/s00161-022-01092-w

Danielewski M. Entropy production and stress--deformation effect on interdiffusion. Defect and Diffusion Forum. 2012. Vol. 323-325. P. 43-48. DOI: https://doi.org/10.4028/www.scientific.net/DDF.323-325.43

Mehrer H. Diffusion in stressed solids. Diffusion in Solids. Springer Series in Solid-State Sciences. 2007. Vol. 155. P. 235-260. DOI: https://doi.org/10.1007/978-3-540-71488-0

Fisher D. J. Diffusion in GaAs and other III-V semiconductors. Switzerland: Trans Tech Publications, 1998.

Beernink K. J., Thornton R. L. Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sources. Applied Physics Letters. 1995. Vol. 66, No. 10. P. 1271-1273. DOI: https://doi.org/10.1063/1.113154

Bugge F., Zeimer U., Wenzel H., Erbert G., Weyers M. Interdiffusion in highly strained InGaAs quantum wells for laser applications. Journal of Crystal Growth. 2004. Vol. 272, No. 1-4. P. 531-537. DOI: https://doi.org/10.1016/j.jcrysgro.2004.08.050

Park Y. M., Park Y. J., Kim K. M., Song J. D. Interdiffusion and structural change in InGaAs quantum well structures by rapid thermal annealing. Journal of Applied Physics. 2004. Vol. 96, No. 10. P. 6080-6084. DOI: https://doi.org/10.1063/1.1805191

Khreis O. M. Interdiffusion and strain effects in pseudomorphic quantum well heterostructures. Solid State Communications. 2004. Vol. 132, No. 11. P. 767-771. DOI: https://doi.org/10.1016/j.ssc.2004.09.036

Reveil M., Clancy P. Resolving the mystery of the concentration-dependence of amphoteric dopant diffusion in III-V semiconductors. Acta Materialia. 2020. Vol. 186. P. 555-563. DOI: https://doi.org/10.1016/j.actamat.2019.12.016

Ryu S., Kim I., Choe B., Jeong W. The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells. Applied Physics Letters. 1995. Vol. 67. P. 1419. DOI: https://doi.org/10.1063/1.114512

Klepach T.I., Zohdi M. Strain assisted diffusion: Modeling and simulation of deformation-dependent diffusion in composite media. Composites Part B: Engineering. 2014. Vol. 56. P. 413-423. DOI: https://doi.org/10.1016/j.compositesb.2013.08.035

Suo Y., Yang F. One-dimensional analysis of the coupling between diffusion and deformation in a bilayer electrode. Acta Mechanica Sinica. 2019. Vol. 35. P. 589–599. DOI: https://doi.org/10.1007/s10409-018-0817-5

Фльорко О. В., Чекурін В. Ф. Математична модель дифузії в деформованій гратці. Вісник Національного університету "Львівська політехніка". 2000. № 393. С. 64–67. https://ena.lpnu.ua/handle/ntb/9185

Peleshchak, R.M., Kuzyk, O.V., Dan’kiv, O.O. The deformation diffusion mechanism of the formation of n n+ transitions in semiconductors under the influence of pulsed laser irradiation. Romanian Reports in Physics. 2021. Vol. 73. P. 506:1–11. URL: https://rrp.nipne.ro/2021/AN73506.pdf

Rammohan K., Rich D. H., MacDougal M. H., Dapkus P. D. Thermal processing of strained InGaAs/GaAs quantum well heterostructures. Applied Physics Letters. 1997. Vol. 70, No. 12. P. 1599-1601. DOI: https://doi.org/10.1063/1.118627

Djie H. S., Ho C. K. F., Mei T., Ooi B. S. Quantum well intermixing enhancement using Ge-doped encapsulant layers in InGaAs/InP. Applied Physics Letters. 2005. Vol. 86. Art. 041107. DOI: https://doi.org/10.1063/1.1868867

Yang Z., Zhang S., Ma S., Shi Y., Liu Q., Hao X., Shang L., Han B., Qiu B., Xu B. Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells. Materials. 2023. Vol. 16(17). Art. 6068. DOI: https://doi.org/10.3390/ma16176068

Published

2026-05-27

Issue

Section

ARTICLES

How to Cite

Mathematical modeling of the influence of deformation effects on the diffusion coefficient of impurities in nanoheterostructures. (2026). Mathematics, Informatics, Physics: Science and Education, 3(1), 41–54. https://doi.org/10.31652/3041-1955-2026-03-01-04